Search results for "Internal stress"

showing 3 items of 3 documents

Research on the internal pressure behavior of metal gas distribution pipelines with different types of tubing defects

2017

The paper aims to approach an important subject related to natural gas distribution networks which, depending on the expansion of the localities, are composed of intercommunicating pipes, pressure reducing stations and branch connections fittings. The urban networks are the most complex ones and the rural areas networks are the simplest. However, irrespective of their installation, they must meet the safety operating requirements as much as possible. According to standards, all these components must be tight and pressure resistant. In this regard, we intend to approach a very important issue related to the behavior of the tubular steel material showing corrosion and/or material defects, and…

Pipeline transportMaterials scienceGas pressurePetroleum engineeringDistribution networksNatural gasbusiness.industrylcsh:TA1-2040Internal pressurebusinesslcsh:Engineering (General). Civil engineering (General)Internal stressCorrosionMATEC Web of Conferences
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Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

2001

Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentratio…

Electron densityTwo-dimensional electron gasMaterials sciencePhotoluminescenceIII-V semiconductorsAluminium compounds ; Gallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Semiconductor heterojunctions ; Two-dimensional electron gas ; Electron density ; Internal stresses ; Photoluminescence ; Raman spectra ; Excitons ; Interface states ; Piezoelectric semiconductors ; Dielectric polarisationExcitonAnalytical chemistryGeneral Physics and AstronomyDielectric polarisationMolecular physicsCondensed Matter::Materials Sciencesymbols.namesakeResidual stress:FÍSICA [UNESCO]Emission spectrumPiezoelectric semiconductorsPhotoluminescenceAluminium compoundsUNESCO::FÍSICAWide-bandgap semiconductorGallium compoundsHeterojunctionInterface statesWide band gap semiconductorssymbolsExcitonsRaman spectraSemiconductor heterojunctionsRaman spectroscopyInternal stressesElectron density
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Residual Stresses and Reactivity of Solids. Determination and Part Plaid in the Reaction Mechanisms

1996

Reaction mechanismRadiationResidual stressChemistryThermodynamicsGeneral Materials ScienceReactivity (chemistry)Condensed Matter PhysicsInternal stressDefect and Diffusion Forum
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